MJE801 Datasheet and Specifications PDF

The MJE801 is a Transistor.

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Part NumberMJE801 Datasheet
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKI. JE700,701,800,801) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802) VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700,702,800,802) VBE(ON) VCE=3.0V, IC=2.0A (MJE701,703,801,803) VBE(ON) VCE=3.0V, IC=4.0A hFE VCE=3.0V, IC=1.5A (MJE7.
Part NumberMJE801 Datasheet
DescriptionNPN Transistor
ManufacturerFairchild Semiconductor
Overview MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 1 . 0 Min. 60 80 VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C VBE = 5V, IC = 0 VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A .
Part NumberMJE801 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A ·Complement to Type MJE701 ·Minimum Lot-to-Lot variations for robust device perf. ISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 40mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=-40mA VBE(on)-1 Base-Emitter On Voltage.
Part NumberMJE801 Datasheet
Description(MJE800 - MJE803) SILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-126 package ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching applicati. E801/803 IC=1.5A ;IB=30mA IC=2A ;IB=40mA IC=4A ;IB=40mA IC=1.5A ; VCE=3V CONDITIONS MJE800/801/802/803 SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 2.5 V 2.8 3.0 V VCE(sat)-1 Collector-emitter saturation voltage VCE(sat)-2 Collector-e.