MJE801 Overview
Description
With TO-126 package - Complement to type MJE700/701/702/703 - High DC current gain - DARLINGTON APPLICATIONS - Designed for general–purpose amplifier and low–speed switching applications PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION MJE800/801/802/803 SYMBOL PARAMETER MJE800/801 VCBO Collector-base voltage MJE802/803 MJE800/801 VCEO Collector-emitter voltage MJE802/803 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 4 0.1 40 150 -55~150 V A A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE800/801 IC=50mA;IB=0 MJE802/803 MJE800/802 MJE801/803 IC=1.5A ;IB=30mA IC=2A ;IB=40mA IC=4A ;IB=40mA IC=1.5A ; VCE=3V CONDITIONS MJE800/801/802/803 SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 2.5 V 2.8 3.0 V VCE(sat)-1 Collector-emitter saturation voltage VCE(sat)-2 Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector cut-off current MJE800/801 MJE802/803 MJE800/802 MJE801/803 VBE-1 2.5 IC=2A ; VCE=3V IC=4A ; VCE=3V VCE=60V; IB=0 100 VCE=80V; IB=0 VCB=Rated BVCEO; IE=0 TC=100 VEB=5V; IC=0 MJE800/802 IC=1.5A ; VCE=3V 750 MJE801/803 IC=2A ; VCE=3V IC=4A ; VCE=3V 100 100 500 2 3.0 V VBE-2 V ICEO µA ICBO IEBO Collector cut-off current Emitter cut-off current µA mA hFE-1 DC current gain hFE-2 DC current gain 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE800/801/802/803 Fig.2 Outline dimensions 3.
