Datasheet4U Logo Datasheet4U.com
Inchange Semiconductor logo

MJE803

Manufacturer: Inchange Semiconductor

MJE803 datasheet by Inchange Semiconductor.

MJE803 datasheet preview

MJE803 Datasheet Details

Part number MJE803
Datasheet MJE803-INCHANGE.pdf
File Size 210.46 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
MJE803 page 2

MJE803 Overview

·Collector Emitter Breakdown Voltage : V(BR)CEO = 80 V ·DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;.

MJE803 from other manufacturers

View MJE803 datasheet index

Brand Logo Part Number Description Other Manufacturers
ST Microelectronics Logo MJE803 SILICON NPN POWER DARLINGTON TRANSISTORS ST Microelectronics
Fairchild Logo MJE803 NPN Epitaxial Silicon Darlington Transistor Fairchild
Motorola Logo MJE803 4.0 AMPERE DARLINGTON POWER TRANSISTORS Motorola
ON Logo MJE803 DARLINGTON POWER TRANSISTORS ON
SavantIC Logo MJE803 (MJE800 - MJE803) SILICON POWER TRANSISTOR SavantIC
Inchange Semiconductor logo - Manufacturer

More Datasheets from Inchange Semiconductor

View all Inchange Semiconductor datasheets

Part Number Description
MJE803T NPN Transistor
MJE800 NPN Transistor
MJE800T NPN Transistor
MJE801 NPN Transistor
MJE801T NPN Transistor
MJE802 NPN Transistor
MJE802T NPN Transistor
MJE8500 NPN Transistor
MJE8503 NPN Transistor
MJE1100 NPN Transistor

MJE803 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts