| Part Number | MJE801T Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MAR. BVCEO IC=50mA (MJE700T,701T,800T,801T) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700T,702T,800T,802T) VCE(SAT) IC=2.0A, IB=40mA (MJE701T,703T,801T,803T) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700T,702T,800T,802T) VBE(ON) VCE=3.0V, IC=2.0A (MJE701T,703T,801T,803T) VBE(ON) VCE=3.0V. |
MJE801T Datasheet and Specifications PDF
The MJE801T is a POWER TRANSISTOR.
| Part Number | MJE801T Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A ·Complement to Type MJE701T ·Minimum Lot-to-Lot variations for robust device per. RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 40mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=40mA VBE(on)-1 Base-Emitter On Voltage. |