MJE801T Overview
Description
The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKING: FULL PART NUMBER TO-220 CASE SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC MJE700T MJE701T MJE800T MJE801T 60 MJE702T MJE703T MJE802T MJE803T 80 60 80 5.0 4.0 100 50 -65 to +150 2.5 SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICBO VCB=Rated VCBO, TC=100°C ICEO VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=50mA (MJE702T,703T,802T,803T) 80 BVCEO IC=50mA (MJE700T,701T,800T,801T) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700T,702T,800T,802T) VCE(SAT) IC=2.0A, IB=40mA (MJE701T,703T,801T,803T) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700T,702T,800T,802T) VBE(ON) VCE=3.0V, IC=2.0A (MJE701T,703T,801T,803T) VBE(ON) VCE=3.0V, IC=4.0A hFE VCE=3.0V, IC=1.5A (MJE700T,702T,800T,802T) 750 hFE VCE=3.0V, IC=2.0A (MJE701T,703T,801T,803T) 750 hFE VCE=3.0V, IC=4.0A 100 fT VCE=3.0V, IC=1.5A, f=1.0MHz 1.0 MAX 100 500 100 2.0 2.5 2.8 3.0 2.5 2.5 3.0 UNITS V V V A mA W °C °C/W UNITS μA μA μA mA V V V V V V V V MHz R1 (23-January 2014) MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN COMPLEMENTARY POWER DARLINGTON TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab is common to pin 2 MARKING: FULL PART NUMBER w w w.
