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MJH11022 Silicon NPN Power Transistor

isc Silicon NPN Darlington Power Transistor DESCR.

Silicon NPN Power Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 250V (Min.) ·High DC Current Gain : hFE= 4

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Complementary Darlington Silicon Power Transistors

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed f

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15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH11017/D MJH10012 (See MJ10012) Complementary Darlington Silicon Power Transistors

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