MMBT3906L Datasheet | Specifications & PDF Download

ADVANCE INFORMATION MMBT3906LP 40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features  BVCEO > -40V  IC = -200mA High Collector Current  PD = 1000mW

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General Purpose Transistor PNP Silicon MMBT3906L, SMMBT3906L Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Cont

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RoHS MMBT3906LT1 SOT-23 TRANSISTOR Dimensions(Unit:mm) SOT-23 GENERAL PURPOSE TRANSISTOR Complementary Pair with MMBT3904LT1. DCollector Dissipati

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Small Signal Product MMBT3906L Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface devic

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3906LT1/D General Purpose Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3906LT1

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES ·As complementary t

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TIGER ELECTRONIC CO.,LTD MMBT3906LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT3906LT1 is designed for general purpose switching and ampli

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General Purpose Transistor PNP Silicon MMBT3906L, SMMBT3906L Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Cont

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