MMBT5401LT1 Datasheet | Specifications & PDF Download

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT5401LT1 TRANSISTOR (PNP) FEATURES Power dissipation

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5401LT1/D High Voltage Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT5401LT1 Mot

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MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring

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TIGER ELECTRONIC CO.,LTD MMBT5401LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT5401LT1 is designed for general purpose applications requir

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MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter

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MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring

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RoHS MMBT5401LT1 TRANSISTOR (PNP) SOT-23 Plastic-Encapsulate Transistors Features DPower dissipation PCM : 0.3 W (Tamb=25OC) TCollector current .,LI

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