MMST2907A Datasheet | Specifications & PDF Download

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) MMST2907A FEATURES * Power dissipation Pcm: 0.2 W (Tamb=2

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PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.(PC=200mW) Pb  Epitaxial planar die construction. Lead-free  Complementar

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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PNP General Purpose Transistor MMST2907A FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available(MMST2222A)

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Features  BVCEO > -60V  IC = -600mA Collector Current  Epitaxial Planar Die Construction  Ultra-Small Surface Mount Package  Complementary NPN Ty

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UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A / PN2907A Features 1)

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