Production specification PNP Silicon Epitaxial Pl.
GME
MMST3906 - PNP Silicon Epitaxial Planar Transistor
Production specification PNP Silicon Epitaxial Planar Transistor FEATURES Power dissipation. Epitaxial planar die construction. Complementary .
Diodes Incorporated
MMST3906 - 40V PNP SMALL SIGNAL TRANSISTOR
Features BVCEO > -40V IC = -200mA Collector Current Epitaxial Planar Die Construction Ultra-Small Surface Mount Package Complementary NPN Ty.
Comchip
MMST3906-G - General Purpose Transistor
General Purpose Transistor MMST3906-G (PNP) RoHS Device Features - Epitaxial planar die construction. - Ultra-small surface mount package. Mechanica.
LITE-ON
MMST3906 - PNP General Purpose Transistor
PNP General Purpose Transistor MMST3906 FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type available(MMST3904) M.
Kexin
MMST3906 - PNP Transistors
SMD Type PNP Transistors MMST3906 (MMST3906) ■ Features ● Epitaxial planar die construction ● Complementary to MMST3904 Transistors 1.Base 2.Emitte.
Rectron
MMST3906 - BIPOLAR TRANSISTORS
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) MMST3906 FEATURES * Power dissipation Pcm: 0.2 W (Tamb=25.
ROHM
MMST3906 - PNP General Purpose Transistor
Transistors UMT3906/SST3906/MMST3906 PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 (NRND) zFeatures 1) BVCEO>−40V (IC=−1mA) 2) Compl.
MCC
MMST3906 - PNP Small Signal Transistors
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .