MULTI-EPITAXIAL Datasheet | Specifications & PDF Download

SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 • Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switch

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Application

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BU505 High Voltage NPN Multiepitaxial Fast-Switching Transistor Features ■ HIGH VOLTAGE CAPABILITY ■ VERY HIGH SWITCHING SPEED ■ HIGH RUGGEDNESS App

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TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type www.DataSheet4U.com TPCP8F01

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TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type www.DataSheet4U.com TPCP8J01 Notebook PC Applicat

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturation Voltage, VCE(sat). • Fast

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMU

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BUX10X MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36

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TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type www.DataSheet4U.com TPCP8H01 2.

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Application

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUV20 Hermetic TO3 (TO-204AE) Metal Package High Voltage, High Current, Fast Switching Suited For High Curren

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP51 • Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switch

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Application

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX12 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching a

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BUV20 MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)

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BUX12 MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)

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Silicon Epitaxial Planar Transistor Features: •  For AF input stages and driver applications •  High current gain •  Low collector-emitter saturation

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