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Seme LAB

BUV20 Datasheet Preview

BUV20 Datasheet

NPN MULTI - EPITAXIAL POWER TRANSISTOR

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BUV20
MECHANICAL DATA
Dimensions in mm(inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
12
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO–3
PIN 1 Base
PIN 2 Emitter
Case is Collector.
NPN MULTI - EPITAXIAL
POWER TRANSISTOR
FEATURES
• HIGH CURRENT
• FAST SWITCHING
• HIGH RELIABILITY
APPLICATIONS
• Industrial Equipment
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage (IE = 0)
VCER
Collector – Emitter Voltage (RBE = 100W)
VCEX
Collector – Emitter Voltage (VBE = -1.5V)
VCEO
Collector – Emitter Voltage (IB = 0)
VEBO
Emitter – Base Voltage (IC = 0)
IC Collector Current
ICM Peak Collector Current (tp = 10 ms)
IB Base Current
Ptot Total Power Dissipation at Tcase £ 25°C
Tstg, Storage Temperature
Tj Junction Temperature
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
160V
150V
160V
125V
7V
50A
60A
10A
250W
–65 to 200°C
200°C
prelim. 5/00




Seme LAB

BUV20 Datasheet Preview

BUV20 Datasheet

NPN MULTI - EPITAXIAL POWER TRANSISTOR

No Preview Available !

BUV20
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Collector - Emitter Sustaining
VCEO(sus)* Voltage
IC = 250mA
L = 25mH
IB = 0
125
V(BR)EBO
VCE(sat)*
VBE(sat)*
Emitter BaseVoltage
Collector Emitter Saturation
Voltage
Base Emitter Saturation
Voltage
IE = 50mA
IC = 25A
IC = 50A
IC = 50A
VCE = 2.5A
IB = 5A
IB =5A
7
ICEO
ICEX
IEBO
hFE*
fT
ton
ts
tr
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
TurnOn Time
Storage Time
Fall Time
VCE = 100V
IB =0
VCE = VCEX
VBE = 1.5V
TC = 125°C
IC = 0
VEB = 5V
VCE = 2V
IC = 25A
VCE = 4V
IC = 50A
IC = 2A VCE = 15V f = 100MHz
IC = 50A
IB =5A
IC = 50A
IB1 =-IB2 =5A
IC = 50A
IB1 =-IB2 =5A
20
10
8
Typ.
0.3
0.7
1.4
Max. Unit
0.6 V
1.2
2
3
3
mA
12
1
60
MHz
1.5
1.2 ms
0.3
NOTES
* Pulse Test: tp = 300ms, d £ 2%
THERMAL CHARACTERISTICS
RqJCThermal Resistance Junction to Case
0.7 °C/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
prelim. 5/00


Part Number BUV20
Description NPN MULTI - EPITAXIAL POWER TRANSISTOR
Maker Seme LAB
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BUV20 Datasheet PDF






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