Micro-Power Datasheet | Specifications & PDF Download

ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - producti

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2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay

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ME8115 PWM ， AC/DC PWM，AC/DC ， 85-265V 12W(ME8115B18W)， 18W。 ，。 ， AC/DC，IC ， （IcIb）， ，，IC， ，VCC10V， ， ，IC ，，、、 ，。IC ，。 Rs。 ●

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W

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VIPer22ADIP ® VIPer22AS LOW POWER OFF LINE SMPS PRIMARY SWITCHER TYPICAL POWER CAPABILITY Mains type SO-8 European (195 - 265 Vac) 12 W US /

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ME6209 Low Power Consumption LDO ME6209 Series General Description The ME6209 series are a group of positive voltage output,three –pin regulator,that

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TDA7379 4 X 13 - 2 X 38W AUDIO POWER AMPLIFIER 2 X 13 + 1 X 38W AUDIO POWER AMPLIFIER PRODUCT PREVIEW ■ HIGH OUTPUT POWER CAPABILITY 2 x 38W/4Ω @18

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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PRELIMINARY VERSION nly R820T O High Performance Low Power Advanced Digital TV Silicon Tuner Datasheet orSuite 808, Building 53, No.195, Sec.4, Chung

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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PL3378 Accurate CC/CV Primary Side PWM Power Switch Product Description PL3378 is a high efficiency Primary Side Regulator and highly integrated PWM

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STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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DP3773A Quasi-Resonant PSR CC/CV PWM Power Switch FEATURES  Low Cost Solution Built-in 800V power BJT  Quasi-Resonant Primary Side Regulation (QR-P

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STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II™ Power MOSFET General features Type STP60NF06 VDSS 60V RDS(on) <0.016Ω ID 60A ■ Except

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STH90N55F4-2 N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STH90N55F4-2 55 V < 0.008

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STP80NF70 N-channel 68 V, 0.0082 Ω, 98 A, TO-220 STripFET™ II Power MOSFET Features Type STP80NF70 VDSS 68 V RDS(on) max < 0.0098 Ω ID 98 A ■ Ex

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TDA7851F 4 x 48 W MOSFET quad bridge power amplifier Datasheet - production data ' 0'03  Flexiwatt25 (Horizontal) ' 0'03  Flexiwatt25 (Ver

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Silicon N-Channel Power MOSFET CS50N20 ANH ○R General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices 2N3902 2N5157 Qualified Level JAN JANTX MAXIMUM RATINGS

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