Micross Datasheet | Specifications & PDF Download

DPAD2 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix DPAD2 The DPAD2 is a low leakage Monolithic Dual Pico-Amp Diode

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J113 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J113 This n-channel JFET is optimised for low noise high performance switching. Th

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SST502 Linear Systems replaces discontinued Siliconix SST502 Current Regulator Diode — POV (min) 45 V Description: The SST502 belongs to a family of ±

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SST503 Linear Systems replaces discontinued Siliconix SST503 Current Regulator Diode — POV (min) 45 V Description: The SST503 belongs to a family of ±

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ICE60N150FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switch

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DRAM SMJ44400 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 FEATURES • Organized 1,048

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UVEPROM SMJ27C512 512K UVEPROM UV Erasable Programmable Read-Only Memory AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-87648 • MIL-STD-883 FEATURES

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10 Bit, 40MHz Current -Output DACs FEATURES • +2.7V to +3.3V Single-Supply Operation • Wide Spurious-Free Dynamic Range: 70dB at • FfOuUllTy=D2i.f2fe

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256Kb EEPROM MYXX28HC256 32K x 8 EEPROM - 5 Volt, Byte Alterable Description The MYXX28HC256 is a high performance CMOS 32K x 8 E2PROM. It is fabric

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MYXPM6021* *Advanced information. Subject to change without notice. Power Management IC (PMIC) Features • Intel® Atom Bay Trail PMIC • Tin-lead b

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Serial NOR Flash Memory MYXN25Q256A13ESF* *Advanced information. Subject to change without notice. 256Mb, 3V, Multiple I/O, 4KB Sector Erase Features

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Silicon Carbide Schottky Diode 600 Volt 3 Amp Hermetic MYXDS0600-03AAS Product OaverrvyiewFeatures • High voltage 600V isolation in a small package

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Silicon Carbide Schottky Diode 600 Volt 3 Amp Hermetic SMD MYXDS0600-03DA0 Product OverviewFeatures ar y• High voltage 600V isolation in a small pac

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Silicon Carbide Schottky Diode 600 Volt 5 Amp Hermetic MYXDS0600-05AAS Product OaverrvyiewFeatures • High voltage 600V isolation in a small package

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SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB Features PBreondeufitcst Overview• Two devices in one hermetic package. ar y• High v

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SiC Schottky 3 Phase Diode Bridge 600 Volt 10 Amp Hermetic MYXD30600-10CEN Product OverviewFeatures ary• High voltage 600V isolation • 6 off high c

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SiC Schottky 3 Phase Diode Bridge 650 Volt 10 Amp Hermetic MYXD30650-10CEN Product OverviewFeatures ary• High voltage 650V isolation • 6 off high c

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SiC Schottky Diode Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN Product OaverrvyiewFeatures • High voltage 600V isolation • High curre

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SiC Schottky Diode Rectifier Bridge 650 Volt 10 Amp Hermetic MYXDB0650-10CEN Product OaverrvyiewFeatures • High voltage 650V isolation • High curre

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SRAM MT5C1009 128K x 8 SRAM WITH CHIP & OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-89598 •MIL-STD-883 FEATURES • Access Times: 12,

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