Mitsubishi Electric Semiconduc Datasheet | Specifications & PDF Download

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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in

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< Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W DESCRIPTION RD15HVF1 is a MOS FET type

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MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR12KM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12KM-14 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3

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www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transist

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BCR 2PM BCR2PM MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR2PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING 10.5 MAX 5.2 Dimension

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