NJ72 Datasheet | Specifications & PDF Download

IRHNJ7230 Radiation Hardened Power MOSFET Surface Mount (SMD-0.5) 200V, 9.4A, N-channel, Rad Hard HEXFET™ Technology PD-93821C Features  Single eve

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F-28 01/99 NJ72L Process Silicon Junction Field-Effect Transistor ¥ VHF/UHF Amplifier Absolute maximum ratings at 25¡C free-air temperature. Gate C

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F-26 01/99 NJ72 Process Silicon Junction Field-Effect Transistor ¥ VHF/UHF Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operati

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Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitny

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Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitny

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Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitny

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