NS3 Datasheet | Specifications & PDF Download

VNN3NV04, VNS3NV04 VND3NV04, VND3NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 RDS(on) 120

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Super Fast Recovery Diode RF2001NS3D Series Standard Fast Recovery Dimensions (Unit : mm) Applications General rectification RF2001 NS3D ① Dat

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%&$ #' $  $ ;B 1='=-: >5>?;= 6MI[\YMZ QC:? 8=6 ) 92 ? ? 6=:? , EA6B, (  Q* E2 =:7:65 2 44@B5:? 8 $ )# 7@BD2 B86D2 AA=:42 D:@? C Q  

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AONS36344 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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AONS32310 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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3-074-264-11(1) CD/DVD Player Operating Instructions http://www.DataSheet4U.net/ DVP-NS305 DVP-NS310 DVP-NS405 DVP-NS410 © 2002 Sony Corporation W

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FJNS3206R FJNS3206R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R

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NS32FX16-15 NS32FX16-20 NS32FX16-25 Imaging Signal Processor PRELIMINARY July 1991 NS32FX16-15 NS32FX16-20 NS32FX16-25 Imaging Signal Processor Gene

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NS32FX16-15 NS32FX16-20 NS32FX16-25 Imaging Signal Processor PRELIMINARY July 1991 NS32FX16-15 NS32FX16-20 NS32FX16-25 Imaging Signal Processor Gene

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NS32FX161-15 NS32FX161-20 NS32FX164-20 NS32FX164-25 NS32FV16-20 NS32FV16-25 Advanced Imaging Communication Signal Processors February 1992 NS32FX161

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® VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE RDS(on) VNS3NV04D 120 mΩ (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each device

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WNS30H100CB Dual power Schottky diode 8 April 2018 Product data sheet 1. General description Dual common cathode power Schottky diode designed for h

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AONS36316 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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AONS32302 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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AONS36348 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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AONS32106 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant Product Summary

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/ Technical Information XNS30S73E6 / IPM /Description ⚫ XNS30S73E6Trench FS-IGBT，DIP25 IPM，、PMSM 。 XNS30S73E6 is an Advanced DIP25 IPM Based on Tren

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STL110NS3LLH7 N-channel 30 V, 0.0027 Ω typ., 120 A STripFET™ H7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - production data

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FJNS3201R FJNS3201R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R

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FJNS3211R FJNS3211R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R

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