NTBG028N170M1 (ON Semiconductor)
SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L
NTBG028N170M1
Features
• Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG
(43 views)
Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mo.
SiC MOSFET
NTBG028N170M1 Distributor
