NTBG028N170M1 Datasheet, Mosfet, ON Semiconductor

NTBG028N170M1 Features

• Mosfet
• Typ. RDS(on) = 28 mW
• Ultra Low Gate Charge (typ. QG(tot) = 222 nC)
• Low Effective Output Capacitance (typ. Coss = 200 pF)
• 100% Avalanche Tested

PDF File Details

Part number:

NTBG028N170M1

Manufacturer:

ON Semiconductor ↗

File Size:

294.44kb

Download:

📄 Datasheet

Description:

Sic mosfet.

NTBG028N170M1 Application

• Applications
• UPS
• DC
• DC Converter
• Boost Converter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Paramete

TAGS

NTBG028N170M1

ON Semiconductor

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