Datasheet4U.com

NTBG028N170M1 - SiC MOSFET

ON Semiconductor

📥 Download Datasheet

NTBG028N170M1 Datasheet Preview — Preview of NTBG028N170M1 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	NTBG028N170M1
Manufacturer	ON Semiconductor ↗
File Size	294.44 KB
Description	SiC MOSFET
Datasheet	NTBG028N170M1-ONSemiconductor.pdf

NTBG028N170M1 Product details

Features

Typ. RDS(on) = 28 mW.
Ultra Low Gate Charge (typ. QG(tot) = 222 nC).
Low Effective Output Capacitance (typ. Coss = 200 pF).
100% Avalanche Tested.
RoHS Compliant Typical.

📁 NTBG028N170M1 Similar Datasheet

NTB0101 - Dual supply translating transceiver (NXP)
NTB0101A - Auto direction sensing dual supply (NXP)
NTB0102 - Dual supply translating transceiver (NXP)
NTB0102-Q100 - Dual supply translating transceiver (NXP)
NTB0104 - Dual supply translating transceiver (NXP)
NTB0104-Q100 - Dual supply translating transceiver (NXP)
NTB082N65S3F - N-Channel MOSFET (INCHANGE)
NTB125N02R - Power MOSFET (ON)

Other Datasheets by ON Semiconductor

NTBG020N090SC1 - SiC MOSFET
NTBG020N120SC1 - SiC MOSFET
NTBG025N065SC1 - SiC MOSFET
NTBG014N120M3P - SiC MOSFET
NTBG015N065SC1 - SiC MOSFET
NTBG040N120M3S - SiC MOSFET

Published: Jun 1, 2024 |