NTBG028N170M1 - SiC MOSFET
NTBG028N170M1 Features
* Typ. RDS(on) = 28 mW
* Ultra Low Gate Charge (typ. QG(tot) = 222 nC)
* Low Effective Output Capacitance (typ. Coss = 200 pF)
* 100% Avalanche Tested
* RoHS Compliant Typical Applications
* UPS
* DC
* DC Converter
* Boost Conver
