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NTBG028N170M1 SiC MOSFET

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Description

Silicon Carbide (SiC) MOSFET * EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L NTBG028N170M1 .

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Features

* Typ. RDS(on) = 28 mW
* Ultra Low Gate Charge (typ. QG(tot) = 222 nC)
* Low Effective Output Capacitance (typ. Coss = 200 pF)
* 100% Avalanche Tested

Applications

* UPS
* DC
* DC Converter
* Boost Converter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Recommended Operation Values of Gate
* to
* Source V

NTBG028N170M1 Distributors

📁 Related Datasheet

NTB0101 NTB0101A NTB0102 NTB0102-Q100 NTB0104 NTB0104-Q100

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