NTB082N65S3F N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTB082N65S3F *.
Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V. Drain Source Voltage: VDSS= 650V(Min). 100% avalanche tested. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number: NTB082N65S3F
Manufacturer: INCHANGE
File Size: 228.89 KB
Datasheet: NTB082N65S3F-INCHANGE.pdf
Description: N-Channel MOSFET

Applications

* .
* Industrial power supplies
* UPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 40 A IDM Pulse Drain Current 100 A PD Total Dissipation@TC=25℃ 320

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NTB082N65S3F N-Channel MOSFET INCHANGE

INCHANGE NTB082N65S3F-like datasheet