NTB0104-Q100 Datasheet, Transceiver, NXP

NTB0104-Q100 Features

• Transceiver
• Automotive product qualification in accordance with AEC-Q100 (Grade 1)
• Specified from 40 C to +85 C and from 40 C to +125 C
• Wide supply voltage range

PDF File Details

Part number:

NTB0104-Q100

Manufacturer:

NXP ↗

File Size:

245.00kb

Download:

📄 Datasheet

Description:

Dual supply translating transceiver. The NTB0104-Q100 is a 4-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage leve

NTB0104-Q100 Application

• Applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down

TAGS

NTB0104-Q100

NXP

📁 Related Datasheet

NTB0104 - Dual supply translating transceiver (NXP)
NTB0104 Dual supply translating transceiver; auto direction sensing; 3-state Rev. 3 — 10 November 2011 Product data sheet 1. General description T.

NTB0101 - Dual supply translating transceiver (NXP)
NTB0101 Dual supply translating transceiver; auto direction sensing; 3-state Rev. 4 — 6 August 2012 Product data sheet 1. General description The .

NTB0101A - Auto direction sensing dual supply (NXP)
NTB0101A Auto direction sensing dual supply Rev. 1 — 14 July 2015 Product data sheet 1. General description The NTB0101A is a 1-bit, dual supply tra.

NTB0102 - Dual supply translating transceiver (NXP)
NTB0102 Dual supply translating transceiver; auto direction sensing; 3-state Rev. 5.2 — 12 June 2023 Product data sheet 1 General description The .

NTB0102-Q100 - Dual supply translating transceiver (NXP)
NTB0102-Q100 Dual supply translating transceiver; auto direction sensing; 3- state Rev. 2.0 — 20 April 2022 Product data sheet 1 General descript.

NTB011N15MC - N-Channel MOSFET (ON Semiconductor)
MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 10.9 mW, 75.4 A NTB011N15MC Features • Shielded Gate MOSFET Technology • Max RDS(on) = 10.9 mW .

NTB082N65S3F - Power MOSFET (ON Semiconductor)
NTB082N65S3F Power MOSFET, N‐Channel, SUPERFET) III, FRFET), 650 V, 40 A, 82 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high v.

NTB082N65S3F - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTB082N65S3F ·DESCRIPTION ·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Volta.

NTB10N40 - Power MOSFET (ON Semiconductor)
NTP10N40, NTB10N40 Preferred Device Advance Information Power MOSFET 10 Amps, 400 Volts N−Channel TO−220 and D2PAK Designed for high voltage, high sp.

NTB125N02R - Power MOSFET (ON)
NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode f.