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NTB18N06L - Power MOSFET

ON Semiconductor

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Datasheet Details

Part number	NTB18N06L
Manufacturer	ON Semiconductor ↗
File Size	81.69 KB
Description	Power MOSFET
Datasheet	NTB18N06L_ONSemiconductor.pdf

NTB18N06L Product details

Features

urce voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance.
General Data and Its Use. ” Switching between the off.
state and the on.
state may traverse any load line provided neit.

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Published: Dec 2, 2007 |