NTBG025N065SC1 - SiC MOSFET
NTBG025N065SC1 Features
* Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 164 nC)
* Low Output Capacitance (Coss = 278 pF)
* 100% Avalanche Tested
* TJ = 175°C
* RoHS Compliant Typical Applications
* SMPS (Switch
