NTBG025N065SC1 Datasheet, Mosfet, ON Semiconductor

NTBG025N065SC1 Features

• Mosfet
• Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 164 nC)
• Low Output Capacitance (Coss = 278 pF)

PDF File Details

Part number:

NTBG025N065SC1

Manufacturer:

ON Semiconductor ↗

File Size:

309.28kb

Download:

📄 Datasheet

Description:

Sic mosfet.

NTBG025N065SC1 Application

• Applications
• SMPS (Switching Mode Power Supplies)
• Solar Inverters
• UPS (Uninterruptable Power Supplies)
• Energ

TAGS

NTBG025N065SC1

ON Semiconductor

📁 Related Datasheet

NTBG020N090SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L NTBG020N090SC1 Features • Typ. RDS(on) = 20 mW @ VG.

NTBG020N120SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L NTBG020N120SC1 Features • Typ. RDS(on) = 20 mW • Ul.

NTBG028N170M1 - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L NTBG028N170M1 Features • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG.

NTBG014N120M3P - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L NTBG014N120M3P Features • Typ. RDS(on) = 14 mW • Low Switching Losses (Typ. .

NTBG015N065SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L NTBG015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS.

NTBG040N120M3S - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M3S, D2PAK-7L Product Preview NTBG040N120M3S Features • Typ. RDS(on) = 40 .

NTBG040N120SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60.

NTBG045N065SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 Features • Typ. RDS(on) = 31 mW @ VG.

NTBG060N065SC1 - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L NTBG060N065SC1 Features • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 m.

NTBG060N090SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L NTBG060N090SC1 Features • Typ. RDS(on) = 60 mW @ VG.