Datasheet4U Logo Datasheet4U.com

NTBG020N120SC1

SiC MOSFET

NTBG020N120SC1 Features

* Typ. RDS(on) = 20 mW

* Ultra Low Gate Charge (QG(tot) = 220 nC)

* High Speed Switching with Low Capacitance (Coss = 258 pF)

* 100% Avalanche Tested

* TJ = 175°C

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

* Free 2LI (o

NTBG020N120SC1 Datasheet (341.75 KB)

Preview of NTBG020N120SC1 PDF

Datasheet Details

Part number:

NTBG020N120SC1

Manufacturer:

ON Semiconductor ↗

File Size:

341.75 KB

Description:

Sic mosfet.

📁 Related Datasheet

NTBG020N090SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L NTBG020N090SC1 Features • Typ. RDS(on) = 20 mW @ VG.

NTBG025N065SC1 - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L NTBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 m.

NTBG028N170M1 - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L NTBG028N170M1 Features • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG.

NTBG014N120M3P - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L NTBG014N120M3P Features • Typ. RDS(on) = 14 mW • Low Switching Losses (Typ. .

NTBG015N065SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L NTBG015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS.

NTBG040N120M3S - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M3S, D2PAK-7L Product Preview NTBG040N120M3S Features • Typ. RDS(on) = 40 .

NTBG040N120SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60.

NTBG045N065SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 Features • Typ. RDS(on) = 31 mW @ VG.

TAGS

NTBG020N120SC1 SiC MOSFET ON Semiconductor

Image Gallery

NTBG020N120SC1 Datasheet Preview Page 2 NTBG020N120SC1 Datasheet Preview Page 3

NTBG020N120SC1 Distributor