NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS .
ON Semiconductor
NTD12N10 - Power MOSFET
NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel.
Naina Semiconductor
NTD122C - Thyristor/Diode Module
Naina Semiconductor Ltd. NTD122C Features Thyristor/Diode Module, 130A • Improved glass passivation for high reliability • Exceptional stability a.
EDI
NTD12 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI.