NTD12 Datasheet | Specifications & PDF Download

Naina Semiconductor Ltd. NTD122C Features Thyristor/Diode Module, 130A • Improved glass passivation for high reliability • Exceptional stability a

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NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI

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NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel

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