NTE23 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTE2393 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Ea

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NTE235 Silicon NPN Transistor Final RF Power Output Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high

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NTE2305 (NPN) & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are sili

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NTE234 Silicon PNP Transistor Low Noise, High Gain Amplifier Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed espec

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NTE2388 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2388 is an N–Channel Enhancement Mode Power MOS Field Effect Transist

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NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 typ

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NTE2369 (NPN) & NTE2370 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7

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NTE2374 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Require

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NTE2345 (NPN) & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE234

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NTE2343 (NPN) & NTE2344 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO .

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NTE233 Silicon NPN Transistor Video IF, Oscillator Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . .

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NTE2372 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Require

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NTE2393 MOSFET N−Channel Enhancement Mode, High Speed Switch TO3P Type Package Description: The NTE2393 is an N−Channel Enhancement Mode Power MOS Fi

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NTE2357 (NPN) & NTE2358 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 22k Bias Resistors Features: D Built–In Bias Resistor (R1 = 22kΩ

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NTE2383 MOSFET P–Channel Enhancement Mode, High Speed Switch (Compl to NTE2382) Description: The NTE2383 is a MOS power P–Channel FET in a TO220 type

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NTE2389 MOSFET N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–Source Voltage, VDS .

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NTE2395 MOSFET N−Ch, Enhancement Mode High Speed Switch TO220 Type Package Features: D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Swi

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NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silic

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NTE2302 Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode Features: D High Breakdown Voltage and High Reliability D High Swi

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NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed f

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