NTE236 Datasheet | Specifications & PDF Download

NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) Description: The NTE236 is a silicon NPN epitaxial planer type transistor d

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NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Cu

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NTE2367 (NPN) & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7

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NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output Features: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Vo

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NTE2369 (NPN) & NTE2370 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7k

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NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary sili

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NTE2359 (NPN) & NTE2360 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 47k Bias Resistors Features: D Built–In Bias Resistor (R1 = 47kΩ

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NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Cur

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NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silic

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NTE2366 Silicon PNP Transistor High Voltage Video Amp (Compl to NTE399) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Ba

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NTE2367 (NPN) & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7k

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