NTE2362 Datasheet, Transistors, NTE

NTE2362 Features

• Transistors D Very Small
    –Sized Package D High Breakdown Voltage: VCEO = 50V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector
    –Base Voltag

PDF File Details

Part number:

NTE2362

Manufacturer:

NTE

File Size:

22.68kb

Download:

📄 Datasheet

Description:

Silicon complementary transistors. The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general  –purpose amplifier and

NTE2362 Application

• Applications The high gain of these devices makes it possible for them to be driven directly from integrated circuits. Features: D Very Small
  &

TAGS

NTE2362

NTE

📁 Related Datasheet

NTE236 - Silicon NPN Transistor (NTE)
NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) Description: The NTE236 is a silicon NPN epitaxial planer type transistor d.

NTE2360 - Silicon Complementary Transistors (NTE)
NTE2359 (NPN) & NTE2360 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 47k Bias Resistors Features: D Built–In Bias Resistor (R1 = 47kΩ.

NTE2361 - Silicon Complementary Transistors (NTE)
NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) plimentary silic.

NTE2363 - Silicon Complementary Transistors (NTE)
NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Cur.

NTE2364 - Silicon Complementary Transistors (NTE)
NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Cu.

NTE2365 - Silicon NPN Transistor (NTE)
NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output Features: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Vo.

NTE2366 - Silicon PNP Transistor (NTE)
NTE2366 Silicon PNP Transistor High Voltage Video Amp (Compl to NTE399) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Ba.

NTE2367 - Silicon Complementary Transistors (NTE)
NTE2367 (NPN) & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7k.

NTE2368 - Silicon Complementary Transistors (NTE)
NTE2367 (NPN) & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7.

NTE2369 - Silicon Complementary Transistors (NTE)
NTE2369 (NPN) & NTE2370 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7k.