NTE63 Datasheet | Specifications & PDF Download

NTE629 & NTE630 Silicon Rectifier Fast Recovery, Dual, Center Tap Description: The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a T

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NTE6354 thru NTE6365 Silicon Power Rectifier Diode, 300 Amp Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Ca

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NTE6354 thru NTE6365 Silicon Power Rectifier Diode, 300 Amp Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Ca

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NTE63 Silicon NPN Transistor High Gain, Low Noise Amp Description: The NTE63 is a silicon NPN high frequency transistor designed primarily for use in

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NTE637 Schottky Barrier Diode (Surface Mount) Absolute Maximum Ratings: (Ta = +25°C, Note 1, unless otherwise specified) Repetitive Peak Reverse Volta

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