
NTH4L014N120M3P - SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L
NTH4L014N120M3P
Features
• Typ. RDS(on) = 14 mW @ VGS = 18 V • Low Switching
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Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mo.
NTH4L014N120M3P Distributor