ON Semiconductor
NTH4L028N170M1 - SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L
NTH4L028N170M1
Features
• Typ. RDS(on) = 28 mW @ VGS = 20 V • Ultra Low Gate
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Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mo.
ON Semiconductor
NTH4L028N170M1 Distributor
