ON Semiconductor
NTHL1000N170M1 - SiC MOSFET
Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
NTHL1000N170M1
Features
• Typ. RDS(on) = 960 mW • Ultra Low Gate Charge (typ
Rating:
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