NTHL1000N170M1 dataSheet
ON Semiconductor
NTHL1000N170M1 - SiC MOSFET
Jun 19, 2024
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6 Hits
• Typ. RDS(on) = 960 mW • Ultra Low Gate Charge (typ. QG(tot) = 14 nC) • Low Effective Output Capacitance (typ. Coss = 11 pF) • 100% Avalanche Tested ...
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