NTHL1000N170M1 Datasheet - ON Semiconductor

NTHL1000N170M1 SiC MOSFET

NTHL1000N170M1 Features

* Typ. RDS(on) = 960 mW

* Ultra Low Gate Charge (typ. QG(tot) = 14 nC)

* Low Effective Output Capacitance (typ. Coss = 11 pF)

* 100% Avalanche Tested

* RoHS Compliant Typical Applications

* Solar Inverters

* Electric Vehicle Charging Stations

Datasheet Details

NTHL1000N170M1

343.81 KB

Sic mosfet.

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