NTHL1000N170M1 SiC MOSFET

ON Semiconductor

Description

Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L NTHL1000N170M1 .

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Datasheet Specifications

Part number: NTHL1000N170M1
Manufacturer: ON Semiconductor ↗
File Size: 343.81 KB
Datasheet: NTHL1000N170M1-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 960 mW
* Ultra Low Gate Charge (typ. QG(tot) = 14 nC)
* Low Effective Output Capacitance (typ. Coss = 11 pF)
* 100% Avalanche Tested

Applications

* Solar Inverters
* Electric Vehicle Charging Stations
* Electric Storing Systems
* SMPS (Switch Mode Power Supplies)
* UPS (Uninterruptible Power Supplies) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to

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