NTHL020N090SC1 Datasheet - ON Semiconductor

NTHL020N090SC1 900V SiC MOSFET

NTHL020N090SC1 Features

* Typ. RDS(on) = 20 mW @ VGS = 15 V

* Typ. RDS(on) = 16 mW @ VGS = 18 V

* Ultra Low Gate Charge (QG(tot) = 196 nC)

* Low Effective Output Capacitance (Coss = 296 pF)

* 100% UIL Tested

* This Device is Halide Free and RoHS Compliant with exemption 7a, P

Datasheet Details

NTHL020N090SC1

332.86 KB

900v sic mosfet.

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