900V Datasheet | Specifications & PDF Download

FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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Silan Microelectronics SVF3878P7_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878P7 is an N-channel enhancement mode power MOS field effect

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FQA11N90C 900V N-Channel MOSFET www.DataSheet4U.com September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1

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TPA90R350A,TPB90R350A,TPP90R350A,TPW90R350A Wuxi Unigroup Microelectronics Co.,Ltd 900V Super-junction Power MOSFET Description 900V Super-junction P

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FQA9N90C QFET FQA9N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F

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SVF9N90F/PN_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF9N90F/PN is an N-channel enhancement mode power MOS field effect transistor which is pr

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-3L V(BR)DSS 900 V RDS(ON) MAX 28 mW @ 15 V ID MAX 11

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FQPF4N90 October 2001 QFET FQPF4N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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UNISONIC TECHNOLOGIES CO., LTD 6N90Z Preliminary 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode po

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Silan Microelectronics SVF3878AP7_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878AP7 is an N-channel enhancement mode power MOS field effec

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FQP8N90C/FQPF8N90C QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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FQA7N90 March 2001 QFET FQA7N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET FQD2N90 / FQU2N90 N-Channel QFET® MOSFET 900 V, 1.7 A, 7.2 Ω January 2014 Description This N-Channel enh

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FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low g

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4MBI900VB-120R1-50 IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package ■ Features Higher efficiency Optimized Advanced T-

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SVF3878PN_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878PN is an N-channel enhancement mode power MOS field effect transistor which is prod

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UNISONIC TECHNOLOGIES CO., LTD 10NM90 10A, 900V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 10NM90 is a Super Junction MOSFET Structure and

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PREPARED BY: DATE: SPEC. No. SA-88049D March 25, 1996 SHARP APPROVED 7 35h ISSUE PAGE 15 Pages DMSION DEVICES DIV. BY: niMj.;? DATE: Tf6 / .

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Silan Microelectronics SVF4N90F/MJ/T/D_Datasheet 4A, 900V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode pow

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FQAF5N90 September 2000 QFET FQAF5N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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