Datasheet Details
- Part number
- NTHL032N065M3S
- Manufacturer
- onsemi
- File Size
- 533.66 KB
- Datasheet
- NTHL032N065M3S-onsemi.pdf
- Description
- SiC MOSFET
NTHL032N065M3S Description
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L V(BR)DSS 650 V RDS(ON) TYP 32 mW @ VGS = 18 V ID.
NTHL032N065M3S Features
* Typical RDS(on) = 32 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 55 nC)
* High Speed Switching with Low Capacitance (Coss = 114 pF)
* 100% Avalanche Tested
* This Device is Halide Free and RoHS Compliant with Exemption 7a,
Pb
* Free 2LI (on seco
NTHL032N065M3S Applications
* SMPS, Solar Inverters, UPS, Energy Storages, EV Charging
Infrastructure
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain
* to
* Source Voltage Gate
* to
* Source Voltage Continuous Drain Current Power Dissipation Continuous Dr
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