NTHL032N065M3S SiC MOSFET

onsemi

Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L V(BR)DSS 650 V RDS(ON) TYP 32 mW @ VGS = 18 V ID.

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Datasheet Specifications

Part number: NTHL032N065M3S
Manufacturer: onsemi
File Size: 533.66 KB
Datasheet: NTHL032N065M3S-onsemi.pdf
Description: SiC MOSFET

Features

* Typical RDS(on) = 32 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 55 nC)
* High Speed Switching with Low Capacitance (Coss = 114 pF)
* 100% Avalanche Tested
* This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb
* Free 2LI (on seco

Applications

* SMPS, Solar Inverters, UPS, Energy Storages, EV Charging Infrastructure MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Continuous Drain Current Power Dissipation Continuous Dr

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NTHL032N065M3S SiC MOSFET onsemi

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