* Typical RDS(on) = 32 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 55 nC)
* High Speed Switching with Low Capacitance (Coss = 114 pF)
* 100% Avalanche Tested
* This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb
* Free 2LI (on seco
NTHL032N065M3S Datasheet (533.66 KB)
NTHL032N065M3S
onsemi
533.66 KB
Sic mosfet.
DATA SHEET www.onsemi.com
Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
V(BR)DSS 650 V
RDS(ON) TYP 32 mW @ VGS = 18 V
ID.
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