Datasheet Details
- Part number
- NTHL025N065SC1
- Manufacturer
- ON Semiconductor ↗
- File Size
- 295.13 KB
- Datasheet
- NTHL025N065SC1-ONSemiconductor.pdf
- Description
- SiC MOSFET
NTHL025N065SC1 Description
Silicon Carbide (SiC) MOSFET * EliteSiC, 19 mohm, 650 V , M2, TO-247-3L NTHL025N065SC1 .
NTHL025N065SC1 Features
* Typ. RDS(on) = 19 mW @ VGS = 18 V
Typ. RDS(on) = 25 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 164 nC)
* Low Capacitance (Coss = 278 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption 7a,
P
NTHL025N065SC1 Applications
* SMPS (Switching Mode Power Supplies)
* Solar Inverters
* UPS (Uninterruptable Power Supplies)
* Energy Storages
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain
* to
* Source Voltage
VDSS
650
V
Gate
* to
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