Part number:
NTHL110N65S3F
Manufacturer:
File Size:
326.00 KB
Description:
Power mosfet.
NTHL110N65S3F Datasheet (326.00 KB)
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 98 mW
* Ultra Low Gate Charge (Typ. Qg = 58 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)
* 100% Avalanche Tested
* This Device is Pb
* Free and is RoHS Compliant Applications
* Te
NTHL110N65S3F Datasheet (326.00 KB)
NTHL110N65S3F
326.00 KB
Power mosfet.
📁 Related Datasheet
NTHL1000N170M1 - SiC MOSFET
(ON Semiconductor)
Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
NTHL1000N170M1
Features
• Typ. RDS(on) = 960 mW • Ultra Low Gate Charge (typ.
NTHL190N65S3HF - N-Channel Power MOSFET
(ON Semiconductor)
MOSFET – Power, N-Channel, SUPERFET III, FRFET
650 V, 20 A, 190 mW
NTHL190N65S3HF
Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high.
NTHL020N090SC1 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – SiC Power, Single N-Channel, TO247-3L
900 V, 20 mW, 118 A
NTHL020N090SC1
Features
• Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (QG(tot) =.
NTHL020N120SC1 - N-Channel MOSFET
(ON Semiconductor)
MOSFET - SiC Power, Single N-Channel
NTHL020N120SC1
1200 V, 20 mW, 103 A
Features
• Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (QG(tot) = 203 nC) •.
NTHL023N065M3S - SiC MOSFET
(ON Semiconductor)
.
NTHL025N065SC1 - SiC MOSFET
(ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V , M2, TO-247-3L
NTHL025N065SC1
Features
• Typ. RDS(on) = 19 mW @ VGS = 18 V
Typ. RDS(on) = 25 .
NTHL027N65S3HF - N-Channel MOSFET
(ON Semiconductor)
NTHL027N65S3HF
Power MOSFET, N-Channel, SUPERFET) III, FRFET), 650 V, 75 A, 27.4 mW
Description SUPERFET III MOSFET is ON Semiconductor’s brand−new hi.
NTHL033N65S3HF - N-Channel MOSFET
(ON Semiconductor)
NTHL033N65S3HF
MOSFET – Power, N‐Channel, SUPERFET III, FRFET
650 V, 70 A, 33 mW
Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high
.
