NTHL110N65S3F dataSheet
ON Semiconductor
NTHL110N65S3F - Power MOSFET
May 9, 2019
·
6 Hits
• 700 V @ TJ = 150°C • Typ. RDS(on) = 98 mW • Ultra Low Gate Charge (Typ. Qg = 58 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF) • ...
Since 2006. D4U Semicon. |
Contact Us
|
Privacy Policy
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations.
By continuing to use our website, you agree to our
Privacy Policy
Accept
ON Semiconductor
