NVBG1000N170M1 dataSheet
ON Semiconductor
NVBG1000N170M1 - SiC MOSFET
Jun 19, 2024
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• Typ. RDS(on) = 960 mW @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 14 nC) • High Speed Switching with Low Capacitance (Coss = 11 pF) • 100% Avala...
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