Part number:
NVBG1000N170M1
Manufacturer:
File Size:
370.27 KB
Description:
Sic mosfet.
NVBG1000N170M1 Datasheet (370.27 KB)
* Typ. RDS(on) = 960 mW @ VGS = 20 V
* Ultra Low Gate Charge (QG(tot) = 14 nC)
* High Speed Switching with Low Capacitance (Coss = 11 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compli
NVBG1000N170M1 Datasheet (370.27 KB)
NVBG1000N170M1
370.27 KB
Sic mosfet.
📁 Related Datasheet
NVBG110N65S3F - N-Channel MOSFET
(ON Semiconductor)
MOSFET - Power, Single N-Channel, D2PAK-7L
650 V, 110 mW, 30 A
NVBG110N65S3F
Description SUPERFET® III MOSFET is onsemi’s brand−new high voltage
super.
NVBG150N65S3F - N-Channel Power MOSFET
(ON Semiconductor)
MOSFET - Power, Single N-Channel, D2PAK-7L
650 V, 150 mW, 24 A
NVBG150N65S3F
Description SUPERFET® III MOSFET is onsemi’s brand−new high voltage
super.
NVBG190N65S3F - N-Channel MOSFET
(ON Semiconductor)
MOSFET - Power, Single N-Channel, D2PAK-7L
650 V, 190 mW, 20 A
NVBG190N65S3F
Description SUPERFET® III MOSFET is onsemi’s brand−new high voltage
super.
NVBG015N065SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, D2PAK-7L
NVBG015N065SC1
Features
• Typ. RDS(on) = 12 mW @ VGS = 18 V
Ty.
NVBG020N090SC1 - N-Channel MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, D2PAK-7L
NVBG020N090SC1
Features
• Typ. RDS(on) = 20 mW @ VGS = 15 V • .
NVBG020N120SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, D2PAK-7L
NVBG020N120SC1
Features
• Typ. RDS(on) = 20 mW • Ultra Low G.
NVBG022N120M3S - SiC MOSFET
(onsemi)
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
NVBG022N120M3S
Features
• Typ. RDS(on) = 22 mW @ VGS = 18 V • Ultra Low Gate.
NVBG025N065SC1 - SiC MOSFET
(ON Semiconductor)
Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L
NVBG025N065SC1
Features
• Typ. RDS(on) = 19 mW @ VGS = 18 V
Typ. RDS(on) = 25 mW @ VGS = 1.
