NVBG1000N170M1 SiC MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L NVBG1000N170M1 .

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Datasheet Specifications

Part number: NVBG1000N170M1
Manufacturer: ON Semiconductor ↗
File Size: 370.27 KB
Datasheet: NVBG1000N170M1-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 960 mW @ VGS = 20 V
* Ultra Low Gate Charge (QG(tot) = 14 nC)
* High Speed Switching with Low Capacitance (Coss = 11 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compli

Applications

* Flyback Converter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Recommended Operation Values of Gate
* to
* Source Voltage TC < 175°C VDSS 1700 V VGS

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NVBG1000N170M1 SiC MOSFET ON Semiconductor

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