ON Semiconductor
NVHL080N120SC1 - N-Channel Silicon Carbide MOSFET
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L
NVHL080N120SC1
Features
• Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (typ. QG(tot) =
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