Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V.
ON Semiconductor
NVHL080N120SC1 - N-Channel Silicon Carbide MOSFET
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L NVHL080N120SC1 Features • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (typ. QG(tot) = .
