NX7361JB-BC (CEL)
LASER DIODE
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN)
FEATURES
• HIGH OUTPUT POWER: Pf = 150 mW at IFP = 10
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NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN.
LASER DIODE
NX7361JB-BC Distributor
