NX7361JB-BC LASER DIODE

CEL

Description

NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN) .
NEC's NX7361JB-BC is a 1310 nm developed strained Multiple Quantum Well (st-MQW) structured pulsed laser diode DIP module with single mode fiber and i.

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Datasheet Specifications

Part number: NX7361JB-BC
Manufacturer: CEL
File Size: 183.82 KB
Datasheet: NX7361JB-BC_CEL.pdf
Description: LASER DIODE

Features

* HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1%
* LONG WAVELENGTH: λC = 1310 nm
* INTERNAL THERMOELECTRIC COOLER, THERMISTOR
* HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE

Applications

* These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and a

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NX7361JB-BC LASER DIODE CEL

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