OD-880L Datasheet | Specifications & PDF Download

HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-880LHT 1.00 MIN. GLASS DOME .015 • Extended operating temperature range .209 .220 • N

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HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi

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MBR870L - MBR8100L 8.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection L

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HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi

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HI-REL GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 OD-880LJ FEATURES ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High power out

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-880LHT 1.00 MIN. GLASS DOME .015 • Extended operating temperature range .209 .220 • N

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DMG8880LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Lea

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