ON Semiconductor LA0 Datasheet | Specifications & PDF Download

FDD107AN06LA0 January 2004 FDD107AN06LA0 N-Channel PowerTrench® MOSFET 60V, 10A, 107mΩ Features • rDS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A • Qg(tot

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FXLA0104 — Low-Voltage Dual-Supply 4-Bit Voltage Translator FXLA0104 Low-Voltage Dual-Supply 4-Bit Voltage Translator with Configurable Voltage Suppl

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FDD14AN06LA0 January 2004 FDD14AN06LA0 N-Channel PowerTrench® MOSFET 60V, 50A, 14.6mΩ Features • rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Qg(to

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BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General descripti

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www.DataSheet4U.com FDD24AN06LA0 February 2004 FDD24AN06LA0 N-Channel Logic Level PowerTrench® MOSFET 60V, 36A, 24mΩ Features • r DS(ON) = 20mΩ (Ty

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FDD14AN06LA0_F085 N-Channel PowerTrench® MOSFET FDD14AN06LA0_F085 N-Channel PowerTrench® MOSFET 60V, 50A, 14.6mΩ Features • rDS(ON) = 12.8mΩ (Typ.),

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MITSUBISHI PM100CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100CLA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT)

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FDB24AN06LA0 / FDP24AN06LA0 www.DataSheet4U.com January 2004 FDB24AN06LA0 / FDP24AN06LA0 N-Channel PowerTrench® MOSFET 60V, 36A, 24mΩ Features • r

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www.DataSheet4U.com 78Q8392L/A03 Low Power Ethernet Coaxial Transceiver November 2008 DESCRIPTION The 78Q8392L/A03 Ethernet Transceiver is a replace

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FDB14AN06LA0 / FDP14AN06LA0 January 2004 FDB14AN06LA0 / FDP14AN06LA0 N-Channel PowerTrench® MOSFET 60V, 60A, 14.6mΩ Features • r DS(ON) = 12.8mΩ (Ty

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LA0151CS Ambient Light Sensor, Linear Current Output, with 2-Stage Gain Switching Overview The LA0151CS is a photo IC for ultra-small package ambient

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MITSUBISHI PM75RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM75RLA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT) ch

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LA0152CS Ambient Light Sensor, Linear Current Output, with Standby Function Overview The LA0152CS is a photo IC for ultra-small package ambient light

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www.DataSheet4U.com FDD45AN06LA0 February 2004 FDD45AN06LA0 N-Channel PowerTrench® MOSFET 60V, 22A, 45mΩ Features • r DS(ON) = 39mΩ (Typ.), VGS = 5

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FDB24AN06LA0 / FDP24AN06LA0 www.DataSheet4U.com January 2004 FDB24AN06LA0 / FDP24AN06LA0 N-Channel PowerTrench® MOSFET 60V, 36A, 24mΩ Features • r

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FDB14AN06LA0 / FDP14AN06LA0 January 2004 FDB14AN06LA0 / FDP14AN06LA0 N-Channel PowerTrench® MOSFET 60V, 60A, 14.6mΩ Features • r DS(ON) = 12.8mΩ (Ty

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MITSUBISHI PM50RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM50RLA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT) c

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GBLA005 - GBLA10 Taiwan Semiconductor CREAT BY ART 4A, 50V - 1000V Glass Passivated Single Phase Bridge Rectifiers FEATURES - Glass passivated juncti

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Superior high Flux for High Voltage System Acrich MJT– 5050 Series SAW0LA0A (Cool, Neutral) Product Data Sheet SAW0LA0A - Acrich MJT 5050 RoHS Prod

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MITSUBISHI PM50CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM50CLA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT) ch

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