ON Semiconductor MBR Datasheet | Specifications & PDF Download

INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR1645CT FEATURES ·Low Forward Voltage ·170℃ Operating Junction Temperature

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Switch-mode Power Rectifier MBR1535CTG, MBR1545CTG Features and Benefits  Center−Tap Configuration  Low Forward Voltage  Low Power Loss / High Effi

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CREAT BY ART MBR2040CTG THRU MBR20200CTG 20.0 AMPS. Schottky Barrier Rectifiers - -         12 3  1 2 3      1.71  Marking Diagr

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MBR2035CT-Y thru MBR20200CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - G

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MBR2045CTR thru MBR20200CTR ® Pb MBR2045CTR/MBR2060CTR/MBR20100CTR/MBR20200CTR Pb Free Plating Product 20 Amperes Heat Sink Dual Common Anode Schott

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MBR2035CA thru MBR20200CA ® MBR2035CA thru MBR20200CA Pb Pb Free Plating Product 20.0 Ampere Dual Common Anode Schottky Barrier Rectifiers Featu

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MBR2030CTLG Switch-mode Dual Schottky Power Rectifier Features and Benefits • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Dro

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MBR3035PT - MBR30150PT 30.0 AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD Features Plastic material used carries Underwriters Laboratory Classific

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MBR1070-MBR10200 High-reliability discrete products and engineering services since 1977 10 A SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (high

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MBR1045CTR thru MBR10200CTR ® Pb MBR1045CTR/MBR1060CTR/MBR10100CTR/MBR10200CTR Pb Free Plating Product 10 Ampere Heat Sink Dual Common Anode Schottk

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR10150CT FEATURES ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Effic

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MBR6035PT thru MBR60100PT ® MBR6035PT thru MBR60100PT Pb Pb Free Plating Product 60 Ampere Dual Common Cathode Switch Mode Schottky Barrier Recti

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR1035 FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low

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MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silic

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MBR3035PT thru MBR30200PT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardr

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MBR3020CT-MBR3045CT High-reliability discrete products and engineering services since 1977 30 A SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (h

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MBR1035, MBR1045 SWITCHMODE™ Power Rectifiers Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 17

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Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thr

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Low VF Chip Schottky Barrier Rectifier MBR0520G THRU MBR0504G 0.5A Surface Mount Schottky Barrier Rectifiers - 20V- 40V Features • Batch process des

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CREAT BY ART MBR2040CTG THRU MBR20200CTG 20.0 AMPS. Schottky Barrier Rectifiers - -         12 3  1 2 3      1.71  Marking Diagr

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