MRF6S18060MBR1 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1.There are no form, fit or function changes with this part replacement.N suffix.
6.

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Datasheet Specifications

Part number: MRF6S18060MBR1
Manufacturer: Freescale Semiconductor
File Size: 727.36 KB
Datasheet: MRF6S18060MBR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* PECTRAL REGROWTH @ 600 kHz (dBc)
* 55
* 60
* 65 25_C
* 70
* 30_C
* 75
* 80
* 85 0 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz TC = 85_C Figure 11. Spectral Regrowth at 400 kHz versus Output Power

Applications

* with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ARCHIVE INFORMATION CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S18060MR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S18060MBR1 Table 1. Maximum Ratings Rating Drain- Source

MRF6S18060MBR1 Distributors

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MRF6S18060MBR1 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF6S18060MBR1-like datasheet