MRF6S9060NBR1, MRF6S9060NR1 RF Power Field Effect Transistors

NXP

MRF6S9060NBR1 Description

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6S9060NR1 replaced by MRFE6S9060NR1.Refer to Device Migration PCN1.

MRF6S9060NBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Integrated ESD Protection
* 225°C Capable Plastic Package
* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
* TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24

MRF6S9060NBR1 Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
* Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pou

📥 Download Datasheet

MRF6S9060NBR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S9060NBR1, MRF6S9060NR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF6S9060NBR1, MRF6S9060NR1
Manufacturer: NXP ↗
File Size: 841.97 KB
Datasheet: MRF6S9060NR1-NXP.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF6S9060NBR1, MRF6S9060NR1.
Please refer to the document for exact specifications by model.

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