MRF6S21140HSR3, MRF6S21140HR3 RF Power FET

NXP

MRF6S21140HSR3 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for W .

MRF6S21140HSR3 Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection

MRF6S21140HSR3 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio and WLL applications.
* Typical 2
* carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg.

📥 Download Datasheet

MRF6S21140HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S21140HSR3, MRF6S21140HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF6S21140HSR3, MRF6S21140HR3
Manufacturer: NXP ↗
File Size: 876.77 KB
Datasheet: MRF6S21140HR3-NXP.pdf
Description: RF Power FET
Note: This datasheet PDF includes multiple part numbers: MRF6S21140HSR3, MRF6S21140HR3.
Please refer to the document for exact specifications by model.

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