* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Optimized for Doherty Applications
* RoHS Compliant
MRF6S21140HSR3 Datasheet (876.77 KB)
MRF6S21140HSR3
876.77 KB
Rf power fet.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N
*Channel Enhancement
*Mode Lateral MOSFETs
Designed for W
.
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